GT5G133 2010-01-15 1 toshiba insulated gate bipolar transistor silicon n channel igbt GT5G133 strobe flash applications ? enhancement-mode ? low gate drive voltage: v ge = 2.5 v (min) (@i c = 130 a) ? peak collector current: i c = 130 a (max) ? compact and thin (tson-8) package absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector-emitter voltage v ces 400 v dc v ges 4 gate-emitter voltage pulse v ges 5 v collector current pulse (note 1) i cp 130 a (note 2a) p c (1) 0.83 w collector power dissipation(t = 10 s) (note 2b) p c (2) 0.69 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy l oads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol rating unit thermal resistance , junction to ambient (t = 10 s) (note2a) r th (j-a) (1) 150 c/w thermal resistance , junction to ambient (t = 10 s) (note2b) r th (j-a) (2) 180 c/w marking (note 3 note 4) note : for (note 1) , (note 2a) , (note 2b) , (note 3) and (note 4) . unit: mm unit: mm jedec D jeita D toshiba 2-3y1a weight: 0.02 g (typ.) circuit configuration 5g133 part no. (or abbreviation code) 1 2 3 4 5 6 7 8 pin #1 lot no product-specific code 5 6 7 8 1 2 3 4 1,2,3 emitter 4 gate 5,6,7,8 collector
GT5G133 2010-01-15 2 electrical characteristics (ta = 25c) characteristics symbol test condition min. typ. max. unit gate leakage current i ges v ge = 4 v, v ce = 0 ? ? 10 a collector cut-off current i ces v ce = 400 v, v ge = 0 ? ? 10 a gate-emitter cut-off voltage v ge (off) i c = 1 ma, v ce = 5 v 0.55 D 1.05 v collector-emitter saturation voltage v ce (sat) i c = 130 a, v ge = 2.5 v ? 3.0 ? v input capacitance c ies v ce = 10 v, v ge = 0, f = 1 mhz ? 2480 ? pf rise time t r ? 2.0 ? turn-on time t on ? 2.1 ? fall time t f ? 1.5 ? switching time turn-off time t off ? 2.1 ? s note note 1: please use devices on condition that the junction temperature is below 150c. repetitive rating: pulse width limit ed by maximum junction temperature. note 2a : device mounted on note 2b : device mounted on a glass-epoxy board (a) a glass-epoxy board (b) note 3: on lower right of the marking indicates pin 1. note 4: a line under a lot no. identifie s the indication of product labels. [[g]]/rohs compatible or [[g]]/rohs [[pb]] please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of product. the rohs is the directive 2002/95/ec of the euro pean parliament and of t he council of 27 january 2003 on the restriction of t he use of certain hazardous substances in electrical and electronic equipment. fr-4 25.4 25.4 0.8 (unit: mm) * weekly code: (three digits) week of manufacture (01 for first week of year, continues up to 52 or 53) year of manufacture (one lo w -order digits of calendar year) fr-4 25.4 25.4 0.8 (unit: mm) for collector for emitter for gate for gate for collector for emitter v in : t r 100 ns t f 100 ns duty cycle 1% 3 v 0 62 300v 2.3
GT5G133 2010-01-15 3 caution on handling this device is mos gate type. therefore , please care of a protection from esd in your handling . caution in design you should be design dv/dt value is under 400v/ s below figure.1. the slope of v ce from 30v to 90v (attached figure.1) dv/dt = (90v-30v) / ( S t) = 60v / S t a) waveform b)waveform(expansion) figure.1 dv / dt outside pin outside pin is same collector voltage. these outside pin are same collector voltage. pin assignment emitter gate collector i c(end) i c v ce dv/dt period i c(begin) 90v 30v v ce St
GT5G133 2010-01-15 4 v ge(off) ? ta gate-emitter cut-off voltage v ge(off) (v) 0 0.4 0.8 1.2 1.6 common emitter v ce = 5 v i c = 1 ma collector-emitter saturation voltage v ce(sat) (v) corrector \ emitter voltage v ce (v) i c ? v ce corrector current i c (a) corrector \ emitter voltage v ce (v) i c ? v ce corrector current i c (a) corrector \ emitter voltage v ce (v) i c ? v ce corrector current i c (a) ambient temperature ta (c) v ce(sat) ? ta ambient temperature ta (c) 200 0 0 1 2 3 4 5 40 80 120 160 common emitter ta = ? 40c 200 0 0 1 2 3 4 5 40 80 120 160 common emitter ta = 25c 200 0 0 1 2 3 4 5 40 80 120 160 2.7 2.5 common emitter ta = 70c 5 0 ? 50 0 50 100 150 2 3 4 common emitter v ge = 2.5 v v ge = 2 v 3 4 2.7 2.5 v ge = 2 v 3 4 2.7 2.5 v ge = 2 v 3 4 corrector i c (a) gate\ emitter voltage v ge (v) i c ? v ge 160 0 0 1 2 3 4 40 80 120 ta = ? 40c 70 25 common emitter v ce = 5 v 1 ? 50 0 50 100 150 100 70 30 i c = 130 a
GT5G133 2010-01-15 5 switching time ( s) collector current i c (a) 200 0 40 80 160 1 0.1 10 common emitter v cc = 300 v v ge = 3 v r g = 62 ta = 25c t r t on t f t off switching time ? i c c ? v ce 10000 1000 100 1 10 1000 10 100 common emitter v ge = 0 v f = 1 mhz ta = 25c c ies c oes c res v ce , v ge ? q g collector \ emitter voltage v ce 0 100 200 300 400 gate\ emitter voltage v ge (v) 0 30 50 0 2 4 6 8 20 common emitter v cc = 300 v r l = 2 ta = 25c v ce v ge 10 gate charge q g (nc) switching time ( s) gate resistance r g ( ) 1000 10 100 1 0.1 10 common emitter v cc = 300 v v ge = 3 v i c = 130 a ta = 25c t r t on t f t off switching time ? r g 40 1 120 ta = 25c 70 minimum gate drive area gate\ emitter voltage v ge (v) peak collector current i cp (a) 160 120 80 40 0 4 6 2 0 main capacitance c m ( f) peak corrector current i cp (a) maximum operating area 200 800 600 400 200 80 120 160 v cm = 350 v ta < = 70c v ge = 2.5 v 56 < = r g < = 91 0 40 0 corrector \ emitter voltage v ce (v) capacitance c pf
GT5G133 2010-01-15 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the ?toshiba semiconductor reliability handbook? and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? 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